SQJ488EP-T1_GE3

N沟道 100V 42A

MOSFET

欧时:
AEQC101 Qualified N-CHANNEL 100-V D-S

立创商城:
N沟道 100V 42A

艾睿:
Amplify electronic signals and switch between them with the help of Vishay&s;s SQJ488EP-T1_GE3 power MOSFET. Its maximum power dissipation is 83000 mW. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 42A 8-Pin SO T/R