SQJ469EP-T1_GE3

SQJ469EP-T1_GE3概述

晶体管, MOSFET, P沟道, -32 A, -80 V, 0.021 ohm, -10 V, -2 V

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel TrenchFET® technologies in lead Pb- and halogen-free SO packages. Options include the traditional D2PAK TO-263 and DPAK TO-252, as well as several PowerPAK® packages, which save space over the D2PAK, DPAK, and SO-8 while delivering similar on-resistance and thermal resistance. The SQ series also includes devices in ultra compact packages such as the TSOP-6, SOT-23, and SC-89.

SQJ469EP-T1_GE3中文资料参数规格
技术参数

针脚数 8

漏源极电阻 0.021 Ω

极性 P-CH

耗散功率 100 W

漏源极电压Vds 80 V

连续漏极电流Ids 32A

上升时间 16 ns

输入电容Ciss 4250pF @40VVds

下降时间 40 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 100000 mW

封装参数

安装方式 Surface Mount

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

包装方式 Tape & Reel TR

最小包装 2500

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买SQJ469EP-T1_GE3
型号: SQJ469EP-T1_GE3
制造商: VISHAY 威世
描述:晶体管, MOSFET, P沟道, -32 A, -80 V, 0.021 ohm, -10 V, -2 V

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