WDFN-8 Dual N 30V,30V 30A,30A 11.5mΩ,11.5mΩ
MOSFET
立创商城:
SIZ342DT-T1-GE3
艾睿:
Amplify electronic signals and switch between them with the help of Vishay&s;s SIZ342DT-T1-GE3 power MOSFET. Its maximum power dissipation is 3700 mW. This device utilizes TrenchFET gen iv technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 30V 15.6A 8-Pin PowerPAIR EP
漏源极电阻 11.5mΩ,11.5mΩ
极性 Dual N
耗散功率 3.7 W
阈值电压 1.2 V
输入电容 650 pF
漏源极电压Vds 30V, 30V
连续漏极电流Ids 30A,30A
上升时间 75 ns
输入电容Ciss 650pF @15VVds
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3700 mW
引脚数 8
封装 WDFN-8
长度 3.1 mm
封装 WDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
最小包装 3000
RoHS标准 RoHS Compliant
含铅标准 Lead Free