SQ2309ES-T1_GE3

SQ2309ES-T1_GE3 编带

MOSFET

欧时:
AEQC101 Qualified P-CHANNEL 60-V D-S 1

立创商城:
P沟道 60V 1.7A

e络盟:
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V

艾睿:
Amplify electronic signals and switch between them with the help of Vishay&s;s SQ2309ES-T1_GE3 power MOSFET. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.

安富利:
Trans MOSFET P-CH 60V 1.7A 3-Pin SOT-23 T/R

Win Source:
MOSFET P-CHAN 60V SOT23