SQJ422EP-T1_GE3 编带
N-CH 40-V PPAK SO-8L
立创商城:
N沟道 40V 74A
艾睿:
As an alternative to traditional transistors, the SQJ422EP-T1_GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 83000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
安富利:
Trans MOSFET N-CH 40V 75A 8-Pin PowerPAK SO T/R
漏源极电阻 3.4 mΩ
极性 N-CH
阈值电压 2 V
输入电容 3730 pF
漏源极电压Vds 40 V
连续漏极电流Ids 75A
上升时间 10 ns
输入电容Ciss 3730pF @20VVds
下降时间 8 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 83000 mW
封装 PowerPak-6
封装 PowerPak-6
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
最小包装 3000
RoHS标准 RoHS Compliant
含铅标准 Lead Free