SI2315DS-T1

P沟道1.25 W， 1.8 V（G -S ）的MOSFET P-Channel 1.25-W, 1.8-V G-S MOSFET

最大源漏极电压VdsDrain-Source Voltage| -40V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -3A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.065Ω @-3A,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1.0--3.0V 耗散功率PdPower Dissipation| 1.25W Description & Applications| FEATURES TrenchFET Power MOSFET 描述与应用| 功率MOSFET

艾睿:
Trans MOSFET P-CH 12V 3.5A 3-Pin TO-236 T/R

Win Source:
P-Channel 1.25-W, 1.8-V G-S MOSFET