SQ3410EV-T1_GE3

SQ3410EV-T1_GE3图片1
SQ3410EV-T1_GE3概述

TSOP-6 N-CH 30V 8A 17.5mΩ

SQ3410EV Series 30 V 8 A Surface Mount Automotive N-Channel Mosfet - TSOP-6


立创商城:
SQ3410EV-T1_GE3


艾睿:
Compared to traditional transistors, SQ3410EV-T1_GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 5000 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N-CH 30V 8A 6-Pin TSOP T/R


Win Source:
MOSFET N-CH 30V 8A TSOP-6


SQ3410EV-T1_GE3中文资料参数规格
技术参数

漏源极电阻 17.5 mΩ

极性 N-Channel

阈值电压 2 V

输入电容 804 pF

漏源极电压Vds 30 V

连续漏极电流Ids 8A

上升时间 12 ns

输入电容Ciss 804pF @15VVds

下降时间 7 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 5W Tc

封装参数

安装方式 Surface Mount

引脚数 6

封装 TSOT-23-6

外形尺寸

封装 TSOT-23-6

物理参数

工作温度 -55℃ ~ 175℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

最小包装 3000

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买SQ3410EV-T1_GE3
型号: SQ3410EV-T1_GE3
制造商: VISHAY 威世
描述:TSOP-6 N-CH 30V 8A 17.5mΩ

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