SIS447DN-T1-GE3

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SIS447DN-T1-GE3概述

Trans MOSFET P-CH 20V 17A 8Pin PowerPAK 1212 EP T/R

If you need to either amplify or switch between signals in your design, then Vishay"s power MOSFET is for you. Its maximum power dissipation is 3700 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET gen iii technology. This P channel MOSFET transistor operates in enhancement mode.


立创商城:
SIS447DN-T1-GE3


艾睿:
If you need to either amplify or switch between signals in your design, then Vishay&s;s SIS447DN-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 3700 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET gen iii technology. This P channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET P-CH 20V 18A 8-Pin PowerPAK 1212 EP T/R


SIS447DN-T1-GE3中文资料参数规格
技术参数

耗散功率 3.7 W

上升时间 35 ns

输入电容Ciss 5590pF @10VVds

下降时间 22 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 3700 mW

封装参数

引脚数 8

封装 PowerPAK-1212-8

外形尺寸

封装 PowerPAK-1212-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买SIS447DN-T1-GE3
型号: SIS447DN-T1-GE3
制造商: VISHAY 威世
描述:Trans MOSFET P-CH 20V 17A 8Pin PowerPAK 1212 EP T/R

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