SXTA42 系列 NPN 300 V 500 mA 1 W 高压 晶体管 - SOT-89
Design various electronic circuits with this versatile NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.
频率 50 MHz
额定电压DC 300 V
额定电流 500 mA
极性 NPN
耗散功率 1 W
击穿电压集电极-发射极 300 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 40 @30mA, 10V
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1000 mW
安装方式 Surface Mount
引脚数 4
封装 SOT-89-3
封装 SOT-89-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SXTA42TA Diodes 美台 | 当前型号 | 当前型号 |
DXTA42-13 美台 | 类似代替 | SXTA42TA和DXTA42-13的区别 |