TSM2301CX

TAIWAN SEMICONDUCTOR  TSM2301CX  晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV

The is a 20V P-channel enhancement mode Power MOSFET with high density cell design for ultra low on-resistance and excellent thermal and electrical capabilities.

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Advance trench process technology

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100°C/W Junction-to-ambient thermal resistance

e络盟:
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV

TME:
Transistor: P-MOSFET; unipolar; -20V; -2.8A; 570mW; SOT23

Newark:
MOSFET Transistor, Low Voltage, P Channel, -2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV