TSM2306CX

TAIWAN SEMICONDUCTOR  TSM2306CX  晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V

The is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology.

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±20V Gate-source voltage

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3.5A Continuous source current

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75°C/W Junction-to-case thermal resistance

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130°C/W Junction-to-ambient thermal resistance