TSM2311CX概述
TAIWAN SEMICONDUCTOR TSM2311CX 晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
The is a P-channel MOSFET with advanced Trench process technology and ±8V gate source voltage.
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- High Density Cell Design for Ultra Low On-resistance
e络盟:
TAIWAN SEMICONDUCTOR TSM2311CX 晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
TME:
Transistor: P-MOSFET; unipolar; -20V; -4A; SOT23
TSM2311CX中文资料参数规格
在线购买TSM2311CX
型号： TSM2311CX
制造商：
Taiwan Semiconductor
台湾半导体
描述：TAIWAN SEMICONDUCTOR TSM2311CX 晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV