ON SEMICONDUCTOR TF412ST5G 晶体管, JFET, -30 V, 1.2 mA, 3 mA, -1.5 V, SOT-883, JFET
N 通道 JFET,
### JFET
一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
欧时:
### N 通道 JFET,ON Semiconductor### JFET 晶体管一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
得捷:
JFET N-CH 30V 10MA SOT883
立创商城:
N 沟道 JFET,30 V,1.2 至 3.0 mA,5.0 mS,SOT-883
贸泽:
JFET NCH J-FET SOT-883
e络盟:
晶体管, JFET, -30 V, 1.2 mA, 3 mA, -1.5 V, SOT-883, JFET
艾睿:
The unique characteristics of this TF412ST5G JFET from ON Semiconductor make it a versatile electronic component to have in an electronic circuit design. Its maximum power dissipation is 100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This junction field effect transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
Allied Electronics:
TF412ST5G N-channel JFET Transistor, 30V, Idss 1.2 - 3mA, 3-Pin SOT-883
安富利:
Trans JFET N-CH 30V 10mA 3-Pin SOT-883 T/R
Verical:
Trans JFET N-CH 30V 10mA Automotive 3-Pin SOT-883 T/R
Newark:
# ON SEMICONDUCTOR TF412ST5G JFET Transistor, -30 V, 1.2 mA, 3 mA, -1.5 V, SOT-883, JFET
耗散功率 100 mW
漏源极电压Vds 30 V
漏源击穿电压 30 V
栅源击穿电压 30 V
击穿电压 30 V
输入电容Ciss 4pF @10VVds
额定功率Max 100 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 100 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-883-3
长度 1.08 mm
宽度 0.68 mm
高度 0.41 mm
封装 SOT-883-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Infrared Sensor Applications, Impedance Conversion, Low-Frequency General-Purpose Amplifier
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99