TIP110

FAIRCHILD SEMICONDUCTOR  TIP110  单晶体管 双极, 达林顿, NPN, 60 V, 50 W, 2 A, 500 hFE

The is a NPN epitaxial silicon Darlington Transistor offers 60V collector-base voltage and 2A collector current. It is designed as monolithic construction with built-in base-emitter shunt resistors.

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1000 High DC current gain hFE @ VCE = 4V, IC = 1A minimum

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Low collector-emitter saturation voltage

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Complementary to TIP115