塑料中功率互补硅晶体管 Plastic Medium-Power Complementary Silicon Transistors
Compared to other transistors, the NPN Darlington transistor from can provide you with a higher current gain value. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
额定电压DC 60.0 V
额定电流 2.00 A
输出电压 60 V
输出电流 2 A
针脚数 3
极性 NPN
耗散功率 50 W
击穿电压集电极-发射极 60 V
热阻 62.5℃/W RθJA
集电极最大允许电流 2A
最小电流放大倍数hFE 1000 @1A, 4V
额定功率Max 2 W
直流电流增益hFE 1000
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 2000 mW
输入电压 5 V
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.28 mm
宽度 4.83 mm
高度 15.75 mm
封装 TO-220-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
TIP110G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
TIP111G 安森美 | 类似代替 | TIP110G和TIP111G的区别 |
TIP110 安森美 | 类似代替 | TIP110G和TIP110的区别 |