STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
The from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with "base island" layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage.
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- Collector to emitter voltage Vce is 60V
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- Collector current Ic is 5A
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- Power dissipation Pd is 65W
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- Collector to emitter saturation voltage of 4V at 5A collector current
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- DC current gain hFE of 1000
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- Operating junction temperature range from 150°C
额定电压DC 60.0 V
额定电流 5.00 A
针脚数 3
极性 NPN
耗散功率 65 W
击穿电压集电极-发射极 60 V
最小电流放大倍数hFE 1000 @3A, 3V
额定功率Max 2 W
直流电流增益hFE 1000
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 2000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 工业, Industrial, Portable Devices, 便携式器材, 电源管理, Power Management, 消费电子产品, Consumer Electronics
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TIP120 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
TIP110 意法半导体 | 类似代替 | TIP120和TIP110的区别 |