路LinCMOS可编程低功耗TIONAL放大器 LinCMOS PROGRAMMABLE LOW-POWER TIONAL AMPLIFIERS
description
The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
Input Offset Voltage Drift...Typically 0.1 µV/Month, Including the First 30 Days
Wide Range of Supply Voltages Over Specified Temperature Range:
0°C to 70°C...3 V to 16 V
–40°C to 85°C...4 V to 16 V
–55°C to 125°C...5 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range Extends Below the Negative Rail C-Suffix and I-Suffix Types
Low Noise. . . 25 nV/√HzTypically at f = 1 kHz High-Bias Mode
Output Voltage Range Includes Negative Rail
High Input Impedance...1012ΩTyp
ESD-Protection Circuitry
Small-Outline Package Option Also Available in Tape and Reel
Designed-In Latch-Up Immunity
输出电流 ≤30 mA
供电电流 950 µA
电路数 1
通道数 1
耗散功率 725 mW
共模抑制比 65 dB
输入补偿漂移 1.80 µV/K
带宽 1.7 MHz
转换速率 3.60 V/μs
增益频宽积 2.2 MHz
输入补偿电压 1.1 mV
输入偏置电流 0.7 pA
工作温度Max 85 ℃
工作温度Min -40 ℃
增益带宽 2.2 MHz
耗散功率Max 725 mW
共模抑制比Min 65 dB
电源电压 4V ~ 16V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.91 mm
高度 1.58 mm
封装 SOIC-8
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
TLC271IDR TI 德州仪器 | 当前型号 | 当前型号 |
TLC272IDR 德州仪器 | 类似代替 | TLC271IDR和TLC272IDR的区别 |
TLC271CDR 德州仪器 | 类似代替 | TLC271IDR和TLC271CDR的区别 |
TLC271ID 德州仪器 | 类似代替 | TLC271IDR和TLC271ID的区别 |