










神剑JFET输入高输出驱动微功耗运算放大器 EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE uPOWER OPERATIONAL AMPLIFIERS
J-FET Amplifier 4 Circuit 14-SOIC
得捷:
IC OPAMP JFET 4 CIRCUIT 14SOIC
立创商城:
TLE2064IDR
德州仪器TI:
Quad, 36-V, 2-MHz, In to V+, JFET-input operational amplifier
贸泽:
运算放大器 - 运放 Quad JFET-Input Hi-Out-Drive uPower
艾睿:
With this general purpose amplifier TLE2064IDR OP amp from Texas Instruments you will be able to amplify the difference between two voltages in no time. Its typical dual supply voltage is ±5|±9|±12|±15 V, with a minimum of ±3.5 V and maximum of ±18 V. This op amp has a minimum operating temperature of -40 °C and a maximum of 85 °C. It has 4 channels per chip. This device is made with bifet technology. This device uses dual power supplies.
安富利:
OP Amp Quad GP ±18V 14-Pin SOIC T/R
Chip1Stop:
High Output CurrentQuad JFET-Input High-Output-Drive uPower Operational Amplifier OP Amp Quad GP 18V 14-Pin SOIC T/R
Verical:
Op Amp Quad High Output Current Amplifier ±18V 14-Pin SOIC T/R
Newark:
# TEXAS INSTRUMENTS TLE2064IDR Operational Amplifier, Quad, 4 Amplifier, 1.8 MHz, 3.4 V/µs, ± 3.5V to ± 18V, SOIC, 14 Pins
Win Source:
IC OPAMP JFET 2MHZ 14SOIC
输出电流 ≤80 mA
供电电流 1.25 mA
电路数 4
通道数 4
共模抑制比 65 dB
输入补偿漂移 6.00 µV/K
带宽 1.8 MHz
转换速率 3.40 V/μs
增益频宽积 2 MHz
输入补偿电压 900 µV
输入偏置电流 4 pA
工作温度Max 85 ℃
工作温度Min -40 ℃
增益带宽 2 MHz
共模抑制比Min 65 dB
安装方式 Surface Mount
引脚数 14
封装 SOIC-14
长度 8.65 mm
宽度 3.91 mm
高度 1.58 mm
封装 SOIC-14
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TLE2064IDR TI 德州仪器 | 当前型号 | 当前型号 |
TLE2064CD 德州仪器 | 类似代替 | TLE2064IDR和TLE2064CD的区别 |
TLE2064ID 德州仪器 | 类似代替 | TLE2064IDR和TLE2064ID的区别 |
TLE2064CDR 德州仪器 | 类似代替 | TLE2064IDR和TLE2064CDR的区别 |