TLC2201AMDG4

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TLC2201AMDG4概述

高级LinCMOSE低噪声精密运算放大器 Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS

description

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOSprocess. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The

Advanced LinCMOSprocess uses silicon-gate technology to obtain input offset voltage stability

with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

B Grade Is 100% Tested for Noise

    30 nV/√HzMax at f = 10 Hz

    12 nV/√HzMax at f = 1 kHz

Low Input Offset Voltage. . . 500 µV Max

Excellent Offset Voltage Stability With Temperature. . . 0.5 µV/°C Typ

Rail-to-Rail Output Swing

Low Input Bias Current

    1 pA Typ at TA= 25°C

Common-Mode Input Voltage Range Includes the Negative Rail

Fully Specified For Both Single-Supply and Split-Supply Operation

TLC2201AMDG4中文资料参数规格
技术参数

输出电流 ≤50 mA

供电电流 1.1 mA

电路数 1

通道数 1

耗散功率 0.725 W

共模抑制比 90 dB

输入补偿漂移 500 nV/K

带宽 1.90 MHz

转换速率 2.50 V/μs

增益频宽积 1.8 MHz

输入补偿电压 80 µV

输入偏置电流 1 pA

工作温度Max 125 ℃

工作温度Min -55 ℃

增益带宽 1.9 MHz

耗散功率Max 725 mW

共模抑制比Min 90 dB

电源电压Max 16 V

电源电压Min 4.6 V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

TLC2201AMDG4引脚图与封装图
TLC2201AMDG4引脚图
TLC2201AMDG4封装图
TLC2201AMDG4封装焊盘图
在线购买TLC2201AMDG4
型号: TLC2201AMDG4
制造商: TI 德州仪器
描述:高级LinCMOSE低噪声精密运算放大器 Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
替代型号TLC2201AMDG4
型号/品牌 代替类型 替代型号对比

TLC2201AMDG4

TI 德州仪器

当前型号

当前型号

TLC2201AMD

德州仪器

类似代替

TLC2201AMDG4和TLC2201AMD的区别

MCP6H01-E/SN

微芯

功能相似

TLC2201AMDG4和MCP6H01-E/SN的区别

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