TD62084AFGO,N,EL

TD62084AFGO,N,EL图片1
TD62084AFGO,N,EL概述

SOP NPN 50V 0.5A

With one of these NPN Darlington transistors from , you"ll be able to process much higher current gain values within your circuit. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 1000@350mA@2 V. It has a maximum collector emitter saturation voltage of 1.1@100mA|1.3@200mA|1.6@350mA V. Its maximum power dissipation is 960 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This Darlington transistor array has an operating temperature range of -40 °C to 85 °C. It has a maximum collector emitter voltage of 50 V.

TD62084AFGO,N,EL中文资料参数规格
技术参数

极性 NPN

耗散功率 960 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 0.5A

工作温度Max 85 ℃

工作温度Min -40 ℃

耗散功率Max 960 mW

封装参数

安装方式 Surface Mount

引脚数 18

封装 SOIC-18

外形尺寸

高度 2 mm

封装 SOIC-18

其他

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买TD62084AFGO,N,EL
型号: TD62084AFGO,N,EL
制造商: Toshiba 东芝
描述:SOP NPN 50V 0.5A

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