互补硅塑料功率晶体管 Complementary Silicon Plastic Power Transistors
The versatility of this PNP GP BJT from makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
频率 3 MHz
额定电压DC -40.0 V
额定电流 100 mA
输出电压 ≥2.70 V
针脚数 3
极性 PNP
耗散功率 2 W
击穿电压集电极-发射极 40 V
热阻 1.67℃/W RθJC
集电极最大允许电流 6A
最小电流放大倍数hFE 15 @3A, 4V
额定功率Max 2 W
直流电流增益hFE 75
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 2000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.28 mm
封装 TO-220-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 工业
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TIP42G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
TIP42 安森美 | 类似代替 | TIP42G和TIP42的区别 |
BD244-S 伯恩斯 | 功能相似 | TIP42G和BD244-S的区别 |