TD62084APGO,N

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TD62084APGO,N概述

PDIP NPN 50V 0.5A

Are you looking for an amplified current signal in your circuit? The NPN Darlington transistor from yields a much higher gain than other transistors. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 1000@350mA@2 V. It has a maximum collector emitter saturation voltage of 1.1@100mA|1.3@200mA|1.6@350mA V. Its maximum power dissipation is 1470 mW. This Darlington transistor array has a minimum operating temperature of -40 °C and a maximum of 85 °C. It has a maximum collector emitter voltage of 50 V.

TD62084APGO,N中文资料参数规格
技术参数

极性 NPN

耗散功率 1470 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 0.5A

工作温度Max 85 ℃

工作温度Min -40 ℃

耗散功率Max 1470 mW

封装参数

安装方式 Through Hole

引脚数 18

封装 DIP-18

外形尺寸

高度 3.5 mm

封装 DIP-18

其他

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买TD62084APGO,N
型号: TD62084APGO,N
制造商: Toshiba 东芝
描述:PDIP NPN 50V 0.5A

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