TD62308APGO,J,S

TD62308APGO,J,S图片1
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TD62308APGO,J,S概述

PDIP NPN+PNP 50V 1.5A

This npn and PNP Darlington transistor from amplifies your current and yields a much higher current gain than other transistors. This product"s maximum continuous DC collector current is 1.5 A. It has a maximum collector emitter saturation voltage of 1.8@1.25A|1.3@0.75A V. Its maximum power dissipation is 2700 mW. It has a maximum collector emitter voltage of 50 V. This Darlington transistor array has an operating temperature range of -40 °C to 85 °C.

TD62308APGO,J,S中文资料参数规格
技术参数

极性 NPN+PNP

耗散功率 2700 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 1.5A

工作温度Max 85 ℃

工作温度Min -40 ℃

耗散功率Max 2700 mW

封装参数

安装方式 Through Hole

引脚数 16

封装 PDIP

外形尺寸

高度 3.5 mm

封装 PDIP

符合标准

RoHS标准

数据手册

在线购买TD62308APGO,J,S
型号: TD62308APGO,J,S
制造商: Toshiba 东芝
描述:PDIP NPN+PNP 50V 1.5A

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