TIP141G

ON SEMICONDUCTOR  TIP141G.  达林顿双极晶体管

- 双极 BJT - 单 NPN - 达林顿 80 V 10 A - 125 W 通孔 TO-247-3

得捷:
TRANS NPN DARL 80V 10A TO247-3

立创商城:
TIP141G

欧时:
ON Semiconductor, TIP141G

贸泽:
达林顿晶体管 BIP NPN 10A 80V

艾睿:
If you require a higher current gain value in your circuit, then the NPN TIP141G Darlington transistor, developed by ON Semiconductor, is for you. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 3.5@40mA@10A V. This product&s;s maximum continuous DC collector current is 10 A, while its minimum DC current gain is 1000@5A@4 V|500@10A@4V. It has a maximum collector emitter saturation voltage of 2@10mA@5A|3@40mA@10A V. Its maximum power dissipation is 125000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans Darlington NPN 80V 10A 3-Pin3+Tab TO-247 Rail

Chip1Stop:
Trans Darlington NPN 80V 10A 3-Pin3+Tab TO-247 Rail

TME:
Transistor: NPN; bipolar; Darlington; 80V; 10A; 125W; TO247-3

Verical:
Trans Darlington NPN 80V 10A 125000mW Automotive 3-Pin3+Tab TO-247 Tube

Newark:
# ON SEMICONDUCTOR  TIP141G  Bipolar BJT Single Transistor, NPN, 80 V, 125 W, 10 A, 500

Win Source:
TRANS NPN DARL 80V 10A TO247