TN0620N3-G

Trans MOSFET N-CH 200V 0.25A 3Pin TO-92

General Description

This  low  threshold,  enhancement-mode  normally-off transistor utilizes a vertical DMOS structure and ’s well-proven,  silicon-gate  manufacturing  process.  This combination  produces  a  device  with  the  power  handling capabilities  of  bipolar  transistors  and  the  high  input impedance  and  positive  temperature  coefficient  inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Features

Low threshold 1.6V max.

High input impedance

Low input capacitance 110pF typical

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Applications

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches