TLC2201ACDR

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TLC2201ACDR概述

高级LinCMOSE低噪声精密运算放大器 Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS

description

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOSprocess. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The

Advanced LinCMOSprocess uses silicon-gate technology to obtain input offset voltage stability

with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

B Grade Is 100% Tested for Noise

    30 nV/√HzMax at f = 10 Hz

    12 nV/√HzMax at f = 1 kHz

Low Input Offset Voltage. . . 500 µV Max

Excellent Offset Voltage Stability With Temperature. . . 0.5 µV/°C Typ

Rail-to-Rail Output Swing

Low Input Bias Current

    1 pA Typ at TA= 25°C

Common-Mode Input Voltage Range Includes the Negative Rail

Fully Specified For Both Single-Supply and Split-Supply Operation

TLC2201ACDR中文资料参数规格
技术参数

供电电流 1.1 mA

电路数 1

通道数 1

耗散功率 0.725 W

共模抑制比 90 dB

输入补偿漂移 500 nV/K

带宽 1.9 MHz

转换速率 2.50 V/μs

增益频宽积 1.8 MHz

输入补偿电压 80 µV

输入偏置电流 1 pA

工作温度Max 70 ℃

工作温度Min 0 ℃

耗散功率Max 725 mW

共模抑制比Min 90 dB

电源电压Max 16 V

电源电压Min 4.6 V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 0℃ ~ 70℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/06/15

数据手册

TLC2201ACDR引脚图与封装图
TLC2201ACDR引脚图
TLC2201ACDR封装图
TLC2201ACDR封装焊盘图
在线购买TLC2201ACDR
型号: TLC2201ACDR
制造商: TI 德州仪器
描述:高级LinCMOSE低噪声精密运算放大器 Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
替代型号TLC2201ACDR
型号/品牌 代替类型 替代型号对比

TLC2201ACDR

TI 德州仪器

当前型号

当前型号

TLC2201ACD

德州仪器

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TLC2201ACDR和TLC2201ACD的区别

TLC2201ID

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TLC2201CD

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