TOSHIBA TK12J60UF 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 360 mohm, 10 V, 3 V
The is a DTMOS II N-channel super-junction Power MOSFET offers faster switching characteristics. This MOSFET contribute to higher efficiency of switched-mode power supplies, such as AC adapters in notebook and desktop computers, servers, flat panel displays and ballasts used in lighting, due to lower ON-state resistance RDS ON. The DTMOS II MOSFET employs a super-junction structure that enables a reduction in both ON-state resistance RDS ON and gate charge Qg, which usually are trade-off. Typically, when either of these characteristics is reduced, the other increases, but with its super-junction DTMOS II design, has been able to reduce both simultaneously, enabling higher power efficiency and switching performance than conventional MOSFETs.
针脚数 3
漏源极电阻 360 mΩ
极性 N-Channel
耗散功率 144 W
阈值电压 3 V
漏源极电压Vds 600 V
输入电容Ciss 720pF @10VVds
额定功率Max 144 W
工作温度Max 150 ℃
耗散功率Max 144W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
封装 TO-3-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Communications & Networking, Power Management, Lighting, Industrial, Computers & Computer Peripherals
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15