TPS1120DR

P沟道增强方式MOSFET

MOSFET - 阵列 2 个 P 沟道（双） 15V 1.17A 840mW 表面贴装型 8-SOIC

得捷:
MOSFET 2P-CH 15V 1.17A 8-SOIC

立创商城:
2个P沟道 15V 1.17A

德州仪器TI:
Dual P-channel Enhancemenent-Mode MOSFET

艾睿:
Thanks to Texas Instruments, both your amplification and switching needs can be taken care of with one component: the TPS1120DR power MOSFET. Its maximum power dissipation is 840 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C.

安富利:
Trans MOSFET P-CH 15V 1.17A 8-Pin SOIC T/R

Chip1Stop:
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R

Verical:
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R

力源芯城:
双路P沟道增强方式MOSFET

Win Source:
MOSFET 2P-CH 15V 1.17A 8-SOIC