



互补功率晶体管 Complementary power transistors
- 双极 BJT - 单 NPN 100 V 25 A 3MHz 125 W 通孔 TO-3P
得捷:
TRANS NPN 100V 25A TO3P
立创商城:
NPN 100V 25A
贸泽:
Bipolar Transistors - BJT Complementary power transistors
e络盟:
双极晶体管阵列, NPN, 100 V, 125 W, 25 A, 10 hFE, TO-3P
艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN TIP35CP GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT NPN 100V 25A 3-Pin3+Tab TO-3P Tube
Chip1Stop:
Trans GP BJT NPN 100V 25A 3-Pin3+Tab TO-3P Tube
Verical:
Trans GP BJT NPN 100V 25A 125000mW 3-Pin3+Tab TO-3P Tube
DeviceMart:
TRANS PWR NPN 100V 25A TO-3P
Win Source:
TRANS NPN 100V 25A TO3P / Bipolar BJT Transistor NPN 100 V 25 A 3MHz 125 W Through Hole TO-3P
频率 3 MHz
针脚数 3
极性 NPN
耗散功率 125 W
增益频宽积 3 MHz
击穿电压集电极-发射极 100 V
集电极最大允许电流 25A
最小电流放大倍数hFE 10 @15A, 4V
额定功率Max 125 W
直流电流增益hFE 10
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 125000 mW
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 15.8 mm
宽度 5 mm
高度 18.7 mm
封装 TO-3-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TIP35CP ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
TIP35CW 意法半导体 | 功能相似 | TIP35CP和TIP35CW的区别 |
TIP35C-T3P-K 友顺 | 功能相似 | TIP35CP和TIP35C-T3P-K的区别 |