TO-3PL NPN 160V 18A
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 180000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 5 V.
频率 30 MHz
极性 NPN
耗散功率 180 W
击穿电压集电极-发射极 160 V
集电极最大允许电流 18A
最小电流放大倍数hFE 80 @1A, 5V
最大电流放大倍数hFE 160
额定功率Max 180 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 180000 mW
安装方式 Through Hole
引脚数 3
封装 TO-3
封装 TO-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99