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The is a low noise precision Operational Amplifier with rail-to-rail output. The operational amplifier using Texas Instruments Advanced LinCMOS™ process. This device combines the noise performance of the lowest-noise JFET amplifier with the DC precision available previously only in bipolar amplifier. The advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices. The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes this device an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.
电源电压DC 8.00 V
输出电流 ≤50 mA
供电电流 1.1 mA
电路数 1
通道数 1
针脚数 8
耗散功率 725 mW
共模抑制比 90dB ~ 110dB
输入补偿漂移 500 nV/K
带宽 1.9 MHz
转换速率 2.50 V/μs
增益频宽积 1.8 MHz
输入补偿电压 100 µV
输入偏置电流 1 pA
工作温度Max 70 ℃
工作温度Min 0 ℃
增益带宽 1.9 MHz
耗散功率Max 725 mW
共模抑制比Min 90 dB
电源电压Max 16 V
电源电压Min 4.6 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.91 mm
高度 1.58 mm
封装 SOIC-8
工作温度 0℃ ~ 70℃
产品生命周期 Active
包装方式 Each
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TLC2201CDG4 TI 德州仪器 | 当前型号 | 当前型号 |
TLC2201ACD 德州仪器 | 类似代替 | TLC2201CDG4和TLC2201ACD的区别 |
TLC2201AID 德州仪器 | 类似代替 | TLC2201CDG4和TLC2201AID的区别 |
TLC2201ID 德州仪器 | 类似代替 | TLC2201CDG4和TLC2201ID的区别 |