高频率4 -A水槽同步MOSFET驱动器 High-Frequency 4-A Sink Synchronous MOSFET Driver
Change state in a high power transistor by implementing this power driver by Texas Instruments. Its typical operating supply voltage is 7.2 V. This device has a maximum propagation delay time of 14typ ns and a maximum power dissipation of 2580 mW. Its maximum power dissipation is 2580 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a typical operating supply voltage of 7.2 V. Its minimum operating supply voltage of 4.5 V, while its maximum is 8 V.
电源电压DC 4.50V min
上升/下降时间 10 ns
输出接口数 2
输出电流 6 A
耗散功率 2580 mW
上升时间 10 ns
下降时间 5 ns
下降时间Max 10 ns
上升时间Max 10 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 2580 mW
电源电压 4.5V ~ 8.8V
电源电压Max 8.8 V
电源电压Min 4 V
安装方式 Surface Mount
引脚数 8
封装 VSON-8
封装 VSON-8
工作温度 -40℃ ~ 125℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TPS28225DRBR TI 德州仪器 | 当前型号 | 当前型号 |
TPS28225DRBRG4 德州仪器 | 完全替代 | TPS28225DRBR和TPS28225DRBRG4的区别 |
TPS28225DRBTG4 德州仪器 | 完全替代 | TPS28225DRBR和TPS28225DRBTG4的区别 |
TPS28225DRBT 德州仪器 | 类似代替 | TPS28225DRBR和TPS28225DRBT的区别 |