TSHF5210

VISHAY  TSHF5210  红外发射器, 高速, 10 °, T-1 3/4 5mm, 100 mA, 1.4 V, 30 ns, 30 ns

The is a 890nm Infrared Emitting Diode in GaAlAs double hetero DH technology. It is moulded in a clear, untinted plastic package. It is suitable for infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements.

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High speed

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High reliability

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High radiant power

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High radiant intensity

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ϕ = ±10° Angle of half intensity

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Low forward voltage

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Suitable for high pulse current operation

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Good spectral matching with Si photodetectors

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12MHz High modulation bandwidth fc