TSHA5200

VISHAY  TSHA5200  红外发射器, 高速, 12 °, T-1 3/4 5mm, 100 mA, 1.5 V, 600 ns, 600 ns

The is an Infrared Emitting Diode in GaAlAs technology, moulded in a clear, untinted plastic package. It is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorption of 875nm radiation in glass.

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High reliability

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Leads with stand-off

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ϕ = ±12° Angle of half intensity

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Low forward voltage

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Suitable for high pulse current operation