







MOSFET驱动器
低端 栅极驱动器 IC 反相 8-SOIC
得捷:
IC DUAL HS MOSFET DRVR 8-SOIC
立创商城:
低边 MOSFET 灌:2A 拉:2A
德州仪器TI:
2-A/2-A dual-channel gate driver with 2 inverting drivers and internal regulator
贸泽:
Gate Drivers Inv Dual H-S MOSFET Driver
艾睿:
Transistors are never going away, implement this TPS2811DR power driver by Texas Instruments in order to help turn on and off the transistor. This device has a maximum propagation delay time of 50 ns and a maximum power dissipation of 730 mW. Its maximum power dissipation is 730 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device has a minimum operating supply voltage of 4 V and a maximum of 14 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
安富利:
MOSFET DRVR 2A 2-OUT High Speed Inv 8-Pin SOIC T/R
Chip1Stop:
Driver 2A 2-OUT High Speed Inv 8-Pin SOIC T/R
Verical:
Driver 2A 2-OUT High Speed Inv 8-Pin SOIC T/R
力源芯城:
双路高速反相MOSFET驱动器
Win Source:
IC DUAL HS MOSFET DRVR 8-SOIC
上升/下降时间 14ns, 15ns
输出接口数 2
输出电流 2 A
耗散功率 730 mW
上升时间 14 ns
下降时间 15 ns
下降时间Max 35 ns
上升时间Max 35 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 730 mW
电源电压 4V ~ 14V
电源电压Max 14 V
电源电压Min 4 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 125℃ TA
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TPS2811DR TI 德州仪器 | 当前型号 | 当前型号 |
TPS2811DRG4 德州仪器 | 完全替代 | TPS2811DR和TPS2811DRG4的区别 |
TPS2811D 德州仪器 | 类似代替 | TPS2811DR和TPS2811D的区别 |
TPS2811DG4 德州仪器 | 类似代替 | TPS2811DR和TPS2811DG4的区别 |