3A双高速功率MOSFET驱动器 3A Dual High-Speed Power MOSFET Drivers
Ideal for high voltage transistors this power driver manufactured by Technology will help switch junction. This device has a maximum propagation delay time of 75 ns and a maximum power dissipation of 470 mW. Its maximum power dissipation is 470 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has a minimum operating temperature of -40 °C and a maximum of 85 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 18 V.
电源电压DC 4.50V min
工作电压 4.5V ~ 18V
上升/下降时间 23ns, 25ns
输出接口数 2
输出电流 3 A
供电电流 2.50 mA
通道数 2
耗散功率 470 mW
上升时间 35 ns
下降时间 35 ns
下降时间Max 35 ns
上升时间Max 35 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
耗散功率Max 470 mW
电源电压 4.5V ~ 18V
安装方式 Surface Mount
引脚数 16
封装 SOIC-16
封装 SOIC-16
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
TC4424EOE Microchip 微芯 | 当前型号 | 当前型号 |
TC4424EOE713 微芯 | 完全替代 | TC4424EOE和TC4424EOE713的区别 |
TC4424COE 微芯 | 类似代替 | TC4424EOE和TC4424COE的区别 |
TC4424COE713 微芯 | 类似代替 | TC4424EOE和TC4424COE713的区别 |