先进的IGBT / MOSFET驱动器 Advanced IGBT/MOSFET Driver
高端 栅极驱动器 IC 非反相 8-DIP
得捷:
IC DRIVER GATE IGBT/MOSFET 8DIP
艾睿:
Change state in a high power transistor by implementing this TD351IN power driver by STMicroelectronics. This device has a maximum propagation delay time of 2200 ns and a maximum power dissipation of 500 mW. Its maximum power dissipation is 500 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 12 V and a maximum of 26 V.
电源电压DC 26.0V max
上升/下降时间 100ns Max
输出接口数 1
输出电压 28.3 V
供电电流 2.50 mA
耗散功率 500 mW
下降时间Max 100 ns
上升时间Max 100 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 500 mW
电源电压 12V ~ 26V
电源电压Min 12 V
安装方式 Through Hole
引脚数 8
封装 DIP-8
封装 DIP-8
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
TD351IN ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
TD351IDT 意法半导体 | 完全替代 | TD351IN和TD351IDT的区别 |
TD351ID 意法半导体 | 类似代替 | TD351IN和TD351ID的区别 |