TEXAS INSTRUMENTS TPS2833D 双路芯片, MOSFET, 高压侧和低压侧, 4.5V-15V电源, 2.4A输出, 75ns延迟, SOIC-8
半桥 栅极驱动器 IC 反相 8-SOIC
得捷:
IC GATE DRVR HALF-BRIDGE 8SOIC
立创商城:
半桥 MOSFET 灌:2.7A 拉:2.4A
德州仪器TI:
2.4-A, 28-V half bridge gate driver with enable for inverting fast synchronous buck in SOIC-8
e络盟:
# TEXAS INSTRUMENTS TPS2833D 双路芯片, MOSFET, 高压侧和低压侧, 4.5V-15V电源, 2.4A输出, 75ns延迟, SOIC-8
艾睿:
Transistors are a crucial component but for high powered designs this TPS2833D power driver by Texas Instruments is a crucial component. This device has a maximum propagation delay time of 130 ns and a maximum power dissipation of 600 mW. Its maximum power dissipation is 600 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V.
安富利:
MOSFET DRVR 3.5A 2-OUT Hi/Lo Side Inv 8-Pin SOIC Tube
Chip1Stop:
Driver 3.5A 2-OUT Hi/Lo Side Inv 8-Pin SOIC Tube
Verical:
Driver 3.5A 2-OUT Hi/Lo Side Inv 8-Pin SOIC Tube
力源芯城:
带使能的反相MOSFET驱动器
电源电压DC 15.0V max
上升/下降时间 50 ns
输出接口数 2
输出电压 11.5 V
输出电流 2.40 A
针脚数 8
耗散功率 0.6 W
上升时间 60 ns
下降时间 60 ns
下降时间Max 60 ns
上升时间Max 60 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 600 mW
电源电压 4.5V ~ 15V
电源电压Max 15 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
TPS2833D TI 德州仪器 | 当前型号 | 当前型号 |
TPS2833DG4 德州仪器 | 类似代替 | TPS2833D和TPS2833DG4的区别 |