TC58NVG1S3HTAI0

SLC NAND Flash 3.3V 2G-bit 256M x 8 48Pin TSOP-I

Organization x8 Memory cell array 2176  128K  8 Register 2176  8 Page size 2176 bytes Block size 128K  8K bytes  Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read  Mode control Serial input/output Command control  Number of valid blocks Min 2008 blocks Max 2048 blocks  Power supply VCC  2.7V to 3.6V  Access time Cell array to register 25 s max Serial Read Cycle 25 ns min CL=50pF  Program/Erase time Auto Page Program 300 s/page typ. Auto Block Erase 2.5 ms/block typ.  Operating current Read 25 ns cycle 30 mA max. Program avg. 30 mA max Erase avg. 30 mA max Standby 50 A max