DIP6 通孔 单通道 32 V 3750 Vrms 光电晶体管输出 光耦合器
DESCRIPTION
The TCDT1100/TCDT1100G series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The base of the phototransistor is not connected providing noise immunity. The elements are mounted on one leadframe which providing a fixed distance between input and output for highest safety requirements.
FEATURES
• Isolation test voltage 5300 VRMS
• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• No base terminal connection for improved noise immunity
• CTR offered in 4 groups
• Thickness though insulation ≥0.75 mm
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥275
• Lead Pb-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
上升/下降时间 7µs, 6.7µs
输出电压 32.0 V
通道数 1
正向电压 1.25 V
输入电流 50.0 mA
耗散功率 250 mW
上升时间 7 µs
隔离电压 5000 Vrms
正向电流 60 mA
输出电压Max 32 V
输入电流Min 60 mA
正向电压Max 1.6 V
正向电流Max 60 mA
下降时间 6.7 µs
工作温度Max 100 ℃
工作温度Min -55 ℃
耗散功率Max 250 mW
安装方式 Through Hole
引脚数 6
封装 PDIP-6
长度 8.8 mm
宽度 6.4 mm
高度 3.81 mm
封装 PDIP-6
工作温度 -55℃ ~ 110℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free