TLC2202MJGB

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TLC2202MJGB概述

高级LinCMOSE低噪声精密运算放大器 Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS

description

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOSprocess. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The

Advanced LinCMOSprocess uses silicon-gate technology to obtain input offset voltage stability

with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

B Grade Is 100% Tested for Noise

    30 nV/√HzMax at f = 10 Hz

    12 nV/√HzMax at f = 1 kHz

Low Input Offset Voltage. . . 500 µV Max

Excellent Offset Voltage Stability With Temperature. . . 0.5 µV/°C Typ

Rail-to-Rail Output Swing

Low Input Bias Current

    1 pA Typ at TA= 25°C

Common-Mode Input Voltage Range Includes the Negative Rail

Fully Specified For Both Single-Supply and Split-Supply Operation

TLC2202MJGB中文资料参数规格
技术参数

输出电流 ≤50 mA

耗散功率 1050 mW

增益频宽积 1.9 MHz

输入偏置电流 0.000001μA @5V

工作温度Max 125 ℃

工作温度Min -55 ℃

耗散功率Max 1050 mW

共模抑制比Min 75 dB

封装参数

安装方式 Through Hole

引脚数 8

封装 CDIP-8

外形尺寸

长度 9.6 mm

宽度 6.67 mm

高度 4.57 mm

封装 CDIP-8

物理参数

工作温度 -55℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买TLC2202MJGB
型号: TLC2202MJGB
制造商: TI 德州仪器
描述:高级LinCMOSE低噪声精密运算放大器 Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS

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