


TOSHIBA TK3P50D 晶体管, MOSFET, 功率, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 2.4 V
The is a N-channel enhancement-mode Silicon MOSFET suitable for switching voltage regulator applications.
Using continuously under heavy loads may cause this product to decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings.
针脚数 3
漏源极电阻 2.3 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 2.4 V
漏源极电压Vds 500 V
连续漏极电流Ids 3A
输入电容Ciss 280pF @25VVds
额定功率Max 60 W
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252
封装 TO-252
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, Power Management, Industrial, 电源管理
RoHS标准 RoHS Compliant
REACH SVHC版本 2015/06/15

| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TK3P50D Toshiba 东芝 | 当前型号 | 当前型号 |
SIHD3N50D-GE3 Vishay Siliconix | 功能相似 | TK3P50D和SIHD3N50D-GE3的区别 |
SIHD3N50D-E3 Vishay Siliconix | 功能相似 | TK3P50D和SIHD3N50D-E3的区别 |