



先进的IGBT / MOSFET驱动器 Advanced IGBT/MOSFET Driver
Description
TD352 is an advanced gate driver for IGBT and power MOSFET. Control and protection functions are included and allow the design of high reliability systems.
Innovative active Miller clamp function avoids the need of negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver.
■ 1A sink / 0.75A source min. gate drive
■ Active Miller clamp feature
■ Desaturation detection
■ Adjustable and accurate turn-on delay
■ UVLO protection
■ 2kV ESD protection
上升/下降时间 100ns Max
输出接口数 1
输出电压 28.3 V
极性 N-Channel
耗散功率 500 mW
下降时间Max 100 ns
上升时间Max 100 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 500 mW
电源电压 12V ~ 26V
安装方式 Through Hole
引脚数 8
封装 PDIP-8
封装 PDIP-8
工作温度 -40℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TD352IN ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
TD352IDT 意法半导体 | 完全替代 | TD352IN和TD352IDT的区别 |
TD352ID 意法半导体 | 功能相似 | TD352IN和TD352ID的区别 |