晶体管, MOSFET, DMOS, P沟道, -85 mA, -350 V, 30 ohm, -10 V, -2.4 V
Looking for a component that can both amplify and switch between signals within your circuit? The power MOSFET from Technology provides the solution. Its maximum power dissipation is 360 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
额定功率 0.36 W
针脚数 3
漏源极电阻 30 Ω
极性 P-CH
耗散功率 360 mW
漏源极电压Vds 350 V
连续漏极电流Ids 0.085A
输入电容Ciss 110pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 360mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TP5335K1-G Microchip 微芯 | 当前型号 | 当前型号 |
TN5335K1-G 微芯 | 类似代替 | TP5335K1-G和TN5335K1-G的区别 |
TN2540N3-G 微芯 | 功能相似 | TP5335K1-G和TN2540N3-G的区别 |
VP0550N3-G 微芯 | 功能相似 | TP5335K1-G和VP0550N3-G的区别 |