晶体管, MOSFET, N沟道, 730 mA, 100 V, 1 ohm, 10 V, 2 V
This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex"s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
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- Low threshold 2.0V max.
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- High input impedance
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- Low input capacitance 125pF max.
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- Fast switching speeds
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- Low on-resistance
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- Free from secondary breakdown
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- Low input and output leakage
额定功率 1.6 W
针脚数 3
漏源极电阻 1 Ω
极性 N-CH
耗散功率 1.6 W
阈值电压 2 V
漏源极电压Vds 100 V
连续漏极电流Ids 0.73A
上升时间 10 ns
输入电容Ciss 125pF @25VVds
额定功率Max 1.6 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6W Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-89-3
封装 SOT-89-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
制造应用 消费电子产品, 电子设计, 商业, 低电压
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
TN2510N8-G Microchip 微芯 | 当前型号 | 当前型号 |
JAN2N6770 美高森美 | 功能相似 | TN2510N8-G和JAN2N6770的区别 |
TN2510N8 微芯 | 功能相似 | TN2510N8-G和TN2510N8的区别 |