SOT-89 N-CH 250V 0.316A
N-Channel 250V 316mA Tj 1.6W Ta Surface Mount TO-243AA SOT-89
得捷:
MOSFET N-CH 250V 0.316A SOT89-3
立创商城:
TN5325N8-G
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the TN5325N8-G power MOSFET, developed by Microchip Technology. Its maximum power dissipation is 1600 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
MOSFET; N-CHANNEL ENHANCEMENT-MODE; 250V; 7.0 Ohm3 SOT-89T/R
安富利:
Trans MOSFET N-CH 250V 0.316A 3-Pin SOT-89 T/R
TME:
Transistor: N-MOSFET; unipolar; 250V; 1.2A; 1.6W; SOT89-3
Verical:
Trans MOSFET N-CH Si 250V 0.316A 4-Pin3+Tab SOT-89 T/R
额定功率 1.6 W
极性 N-CH
耗散功率 1.6 W
漏源极电压Vds 250 V
连续漏极电流Ids 0.316A
上升时间 15 ns
输入电容Ciss 110pF @25VVds
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6W Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-89
封装 SOT-89
材质 Silicon
工作温度 -55℃ ~ 150℃
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
TN5325N8-G Microchip 微芯 | 当前型号 | 当前型号 |
TN5325N8 超科 | 功能相似 | TN5325N8-G和TN5325N8的区别 |