TPN11003NL,LQ

8-TSON高级

* High-speed switching * Small gate charge: QSW = 2.0 nC typ. * Low drain-source on-resistance: RdsON = 12.6 mΩ typ. Vgs = 4.5 V * Low leakage current: Idss = 10 µA max Vds = 30 V * Enhancement mode: Vth = 1.3 to 2.3 V Vds = 10 V, Id = 0.1 mA

得捷:
MOSFET N CH 30V 11A 8TSON-ADV

立创商城:
N沟道 30V 11A

贸泽:
MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V

安富利:
Trans MOSFET N-CH 30V 11A 8-Pin TSON