TSSOP N-CH 20V 6A
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS ON = 13 mΩ typ.
• High forward transfer admittance: |Yfs| = 15 S typ.
• Low leakage current: IDSS = 10 µA max VDS = 20 V
• Enhancement mode: Vth = 0.5~1.2 V VDS = 10 V, ID = 200 µA
Win Source:
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII