TPCF8402 复合场效应管 30V/-30V 4A/-3.2A 1206-8/vs-8 marking/标记 F6B 电机驱动 DC/DC转换
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS IV / U-MOS III Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS ON = 60 mΩ typ. N Channel RDS ON = 38 mΩ typ. • High forward transfer admittance : P Channel |Yfs| = 5.9 S typ. N Channel |Yfs| = 6.8 S typ. • Low leakage current : P Channel IDSS = −10 μA VDS = −30 V N Channel IDSS = 10 μA VDS = 30 V • Enhancement-mode : P Channel Vth = −0.8 to −2.0 V VDS = −10 V, ID = −1mA N Channel Vth = 1.3 to 2.5 V VDS = 10 V, ID = 1mA