TPCF8B01

TPCF8B01 复合场效应管MOSFET+肖特基二极管 -20V -2.7A 1A 0.46V 1206-8/vs-8 marking/标记 F8A 低漏源导通电阻/低漏电流/低正向电压

最大源漏极电压VdsDrain-Source Voltage| P沟道 P-Channel \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -20V 最大漏极电流IdDrain Current| 8V 源漏极导通电阻RdsDrain-Source On-State Resistance| -2.7A 开启电压Vgs（th）Gate-Source Threshold Voltage| 110mΩ@ VGS = -4.5V, ID = -1.4mA 耗散功率PdPower Dissipation| -0.5~-1.2V Description & Applications| 肖特基二极管SBD Schottky Barrier Diodes 描述与应用| 20V

Win Source:
MOSFET P-CH 20V 2.7A VS-8